The performance of graphene-based transistors is often limited by the largeelectrical resistance across the metal-graphene contact. We report an approachto achieve ultra-low resistance metal contacts to graphene transistors. Througha process of metal-catalyzed etching in hydrogen, multiple nano-sized pits withzigzag edges are created in the graphene that form strong chemical bonds withdeposited nickel metallization for source-drain contacts without the need forfurther annealing. This facile contact treatment prior to electrodemetallization results in contact resistance as low as 100 ohm-um insingle-layer graphene field-effect transistors, and 11 ohm-um in bilayergraphene transistors. The treatment is compatible with complementarymetal-oxide-semiconductor fabrication processes, and holds great promise tomeet the contact performance required for the integration of graphene in futureintegrated circuits.
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